PART |
Description |
Maker |
IS42S16100A1 IS42S16100A1-10T IS42S16100A1-10TI IS |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc ISSI
|
IS42S16100 IS42S16100-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
|
ICS
|
IS42S16128 |
128K words x 16 Bits x 2 Banks SDRAM
|
Integrated Silicon Solution Inc
|
IS42S16128 IS42S16128-10T IS42S16128-12T IS42S1612 |
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM 512K x 2 BANKS x 16 BIT SDRAM From old datasheet system
|
Winbond Electronics
|
K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
IS42S32200B-6T IS42S32200B-6TL IS42S32200B-6TI IS4 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solu... Integrated Silicon Solution, Inc.
|
W9816G6IH W9816G6IH-7I W9816G6IH-6I W9816G6IH-5 |
512K × 2 BANKS × 16 BITS SDRAM 512K 隆驴 2 BANKS 隆驴 16 BITS SDRAM
|
Winbond
|
W9816G6IH-5 W9816G6IH-6 W9816G6IH-6I W9816G6IH-7 W |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
W9816G6CB W9816G6CB-6 W9816G6CB-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|